Latest news with #ROHM
Business Upturn
09-07-2025
- Business Upturn
ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications
Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) — ROHM Semiconductor today announced the development of the AW2K21, a 30V N-channel MOSFET in a common-source configuration that delivers an industry-leading ON-resistance of just 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package. With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What's more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity. In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits). The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size. For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications. The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry's lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model. Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society. Online Sales Information Sales Launch Date: April 2025 Online Distributors: DigiKey™, Mouser™ and Farnell™ Applicable Part No: AW2K21 The product will be offered at other online distributors as it becomes available. Note: DigiKey™, Mouser™ and Farnell™ are trademarks or registered trademarks of their respective companies. _______________________________________________________________________________________________________________________________________ *ROHM July 2025 study Attachments ROHM Develops the AW2K21, a 30V N-Channel MOSFET Comparison Between Standard Products and ROHM's New Product the AW2K21 Disclaimer: The above press release comes to you under an arrangement with GlobeNewswire. Business Upturn takes no editorial responsibility for the same. Ahmedabad Plane Crash
Yahoo
08-07-2025
- Automotive
- Yahoo
ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications
ROHM Develops the AW2K21, a 30V N-Channel MOSFET Comparison Between Standard Products and ROHM's New Product the AW2K21 Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the AW2K21, a 30V N-channel MOSFET in a common-source configuration that delivers an industry-leading ON-resistance of just 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package. With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What's more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity. In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits). The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size. For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications. The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry's lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model. Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society. Online Sales InformationSales Launch Date: April 2025Online Distributors: DigiKey™, Mouser™ and Farnell™Applicable Part No: AW2K21The product will be offered at other online distributors as it becomes available. Note: DigiKey™, Mouser™ and Farnell™ are trademarks or registered trademarks of their respective companies. _______________________________________________________________________________________________________________________________________*ROHM July 2025 study Attachments ROHM Develops the AW2K21, a 30V N-Channel MOSFET Comparison Between Standard Products and ROHM's New Product the AW2K21 CONTACT: Heike Mueller ROHM Semiconductor +1-408-720-1900 hmueller@ in retrieving data Sign in to access your portfolio Error in retrieving data Error in retrieving data Error in retrieving data Error in retrieving data
Business Upturn
01-07-2025
- Business
- Business Upturn
ROHM Introduces a New MOSFET for AI Servers Featuring Industry-Leading* SOA Performance and Ultra-Low ON-Resistance
Santa Clara, CA and Kyoto, Japan, July 01, 2025 (GLOBE NEWSWIRE) — ROHM Semiconductor today announced the launch of the RY7P250BM, a 100V power MOSFET optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies that require robust battery protection. As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads. The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (V DS =48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (V GS =10V, I D =50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size. Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle. ROHM's new product has also been certified as a recommended component by a leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low R DS(on) has been highly evaluated for cloud infrastructure. Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products. Application Examples• 48V AI server systems and power supply hot-swap circuits in data centers• 48V industrial equipment power systems (i.e. forklifts, power tools, robots, fan motors)• Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles) • UPS and emergency power systems (battery backup units)
Business Upturn
25-06-2025
- Automotive
- Business Upturn
ROHM Launches an Isolated Gate Driver IC Optimized for High-Voltage GaN Devices
Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) — ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-class high-voltage GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. As global energy consumption continues to grow, energy-saving initiatives have become a shared global priority. Motors and power supplies alone are estimated to account for approx. 97% of the world's total electricity consumption. Achieving higher efficiency in these systems is increasingly dependent on utilizing wide bandgap devices such as SiC and GaN to control and convert electricity more efficiently. Leveraging expertise in developing isolated gate driver ICs for silicon semiconductors and SiC devices, ROHM has introduced this new IC as the first in a series of isolated gate driver solutions optimized for GaN devices. Safe signal transmission is achieved by isolating the device from the control circuitry during switching operations that involve rapid voltage rise and fall cycles. The BM6GD11BFJ-LB utilizes proprietary on-chip isolation technology to reduce parasitic capacitance, enabling high-frequency operation up to 2MHz. This maximizes the high-frequency switching capabilities of GaN devices. This contributes not only to greater energy efficiency and performance in applications but also reduces mounting area by minimizing the size of peripheral components. At the same time, CMTI (Common-Mode Transient Immunity – an indicator of noise tolerance in noise isolated gate driver ICs) has been increased to 150V/ns – 1.5 times higher than conventional products – preventing malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65ns, 33% less than conventional products. These performance improvements allow for stable, reliable operation at higher frequencies while minimizing power loss through better duty cycle control. With a gate drive voltage range of 4.5V to 6.0V and an isolation voltage of 2500Vrms, the BM6GD11BFJ-LB is designed to fully support a wide range of high-voltage GaN devices, including ROHM's newly added 650V EcoGaN™ HEMT. The industry-leading low output-side current consumption of 0.5mA (Max) also reduces standby power, improving overall system efficiency. EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd Application Examples◇ Industrial Equipment: Power supplies for PV inverters, ESS (Energy Storage Systems), communication base stations, servers, and industrial motors ◇ Consumer Devices: White goods, AC adapters (USB chargers), PCs, TVs, refrigerators, Air Conditioners
Yahoo
25-06-2025
- Automotive
- Yahoo
ROHM Launches an Isolated Gate Driver IC Optimized for High-Voltage GaN Devices
Isolated Gate Driver IC Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-class high-voltage GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. As global energy consumption continues to grow, energy-saving initiatives have become a shared global priority. Motors and power supplies alone are estimated to account for approx. 97% of the world's total electricity consumption. Achieving higher efficiency in these systems is increasingly dependent on utilizing wide bandgap devices such as SiC and GaN to control and convert electricity more efficiently. Leveraging expertise in developing isolated gate driver ICs for silicon semiconductors and SiC devices, ROHM has introduced this new IC as the first in a series of isolated gate driver solutions optimized for GaN devices. Safe signal transmission is achieved by isolating the device from the control circuitry during switching operations that involve rapid voltage rise and fall cycles. The BM6GD11BFJ-LB utilizes proprietary on-chip isolation technology to reduce parasitic capacitance, enabling high-frequency operation up to 2MHz. This maximizes the high-frequency switching capabilities of GaN devices. This contributes not only to greater energy efficiency and performance in applications but also reduces mounting area by minimizing the size of peripheral components. At the same time, CMTI (Common-Mode Transient Immunity - an indicator of noise tolerance in noise isolated gate driver ICs) has been increased to 150V/ns – 1.5 times higher than conventional products – preventing malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65ns, 33% less than conventional products. These performance improvements allow for stable, reliable operation at higher frequencies while minimizing power loss through better duty cycle control. With a gate drive voltage range of 4.5V to 6.0V and an isolation voltage of 2500Vrms, the BM6GD11BFJ-LB is designed to fully support a wide range of high-voltage GaN devices, including ROHM's newly added 650V EcoGaN™ HEMT. The industry-leading low output-side current consumption of 0.5mA (Max) also reduces standby power, improving overall system efficiency. EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd Application Examples◇ Industrial Equipment: Power supplies for PV inverters, ESS (Energy Storage Systems), communication base stations, servers, and industrial motors◇ Consumer Devices: White goods, AC adapters (USB chargers), PCs, TVs, refrigerators, Air Conditioners The BM6GD11BFJ-LB is now available. It is offered through online distributors such as DigiKey™ and Mouser™. The sample price is $4.0/unit (excluding tax). DigiKey™ and Mouser™ are trademarks or registered trademarks of their respective companies. Going forward, ROHM plans to offer gate driver ICs for GaN device control together with GaN device products, supporting simpler application design. TerminologyCommon-Mode Transient Immunity (CMTI)A key parameter of isolated gate drivers, CMTI refers to the driver's ability to withstand rapid voltage changes that occur over very short durations. This is especially important when driving high slew rate devices such as GaN HEMTs, where rapid voltage transitions are common. A gate driver with high CMTI can prevent device damage while reducing the risk of circuit shorts. Attachment Isolated Gate Driver IC CONTACT: Heike Mueller ROHM Semiconductor +1-408-720-1900 hmueller@
