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Renesas Sets New MCU Performance Bar with 1-GHz RA8P1 Devices with AI Acceleration
Renesas Sets New MCU Performance Bar with 1-GHz RA8P1 Devices with AI Acceleration

Yahoo

time01-07-2025

  • Business
  • Yahoo

Renesas Sets New MCU Performance Bar with 1-GHz RA8P1 Devices with AI Acceleration

Single- and Dual-Core MCUs Combine Arm Cortex-M85 and M33 Cores with Arm Ethos-U55 NPU to Deliver Superior AI Performance up to 256 GOPs Unprecedented 7300+ CoreMarks1 with Dual Arm CPU cores TSMC 22ULL Process Delivers High Performance and Low Power Consumption Embedded MRAM with Faster Write Speeds and Higher Endurance and Retention Dedicated Peripherals Optimized for Vision and Voice AI plus Real-Time Analytics New AI Software Framework Eases Development and Enables Easy Migration with MPUs Leading-Edge Security Features Ensure Data Privacy TOKYO, July 01, 2025--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RA8P1 microcontroller (MCU) Group targeted at Artificial Intelligence (AI) and Machine Learning (ML) applications, as well as real-time analytics. The new MCUs establish a new performance level for MCUs by combining 1GHz Arm® Cortex®-M85 and 250MHz Cortex-M33 CPU cores with the Arm Ethos™-U55 Neural Processing Unit (NPU). This combination delivers the highest CPU performance of over 7300 CoreMarks and AI performance of 256 GOPS at 500 MHz. Designed for Edge/Endpoint AI The RA8P1 is optimized for edge and endpoint AI applications, using the Ethos-U55 NPU to offload the CPU for compute intensive operations in Convolutional and Recurrent Neural Networks (CNNs and RNNs) to deliver up to 256 MACs per cycle that yield 256 GOPS performance at 500 MHz. The new NPU supports most commonly used networks, including DS-CNN, ResNet, Mobilenet TinyYolo and more. Depending on the neural network used, the Ethos-U55 provides up to 35x more inferences per second than the Cortex-M85 processor on its own. Advanced Technology The RA8P1 MCUs are manufactured on the 22ULL (22nm ultra-low leakage) process from TSMC, enabling ultra-high performance with very low power consumption. This process also enables the use of embedded Magnetoresistive RAM (MRAM) in the new MCUs. MRAM offers faster write speeds along with higher endurance and retention compared with Flash. "There is explosive growth in demand for high-performance edge AIoT applications. We are thrilled to introduce what we believe are the best MCUs to address this trend," said Daryl Khoo, Vice President of Embedded Processing Marketing Division at Renesas. "The RA8P1 devices showcase our technology and market expertise and highlight the strong partnerships we have built across the industry. Customers are eager to employ these new MCUs in multiple AI applications." "The pace of innovation in the age of AI is faster than ever, and new edge use cases demand ever-improving performance and machine learning on-device," said Paul Williamson, senior vice president and general manager, IoT Line of Business at Arm. "By building on the advanced AI capabilities of the Arm compute platform, Renesas' RA8P1 MCUs meet the demands of next generation voice and vision applications, helping to scale intelligent, context-aware AI experiences." "It is gratifying to see Renesas harness the performance and reliability of TSMC 22ULL embedded MRAM technology to deliver outstanding results for its RA8P1 devices," said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. "As TSMC continues to advance our embedded non-volatile memory (eNVM) technologies, we look forward to strengthening our long-standing collaboration with Renesas to drive innovation in future groundbreaking devices." Robust, Optimized Peripheral Set for AI Renesas has integrated dedicated peripherals, ample memory and advanced security to address Voice and Vision AI and Real-time Analytics applications. For vision AI, a 16-bit camera interface (CEU) is included that supports sensors up to 5 megapixels, enabling camera and demanding Vision AI applications. A separate MIPI CSI-2 interface offers a low pin-count interface with two lanes, each up to 720Mbps. In addition, multiple audio interfaces including I2S and PDM support microphone inputs for voice AI applications. The RA8P1 offers both on-chip and external memory options for efficient, low latency neural network processing. The MCU includes 2MB SRAM for storing intermediate activations or graphics framebuffers. 1MB of on-chip MRAM is also available for application code and storage of model weights or graphics assets. High-speed external memory interfaces are available for larger models. SIP options with 4 or 8 MB of external flash in a single package are also available for more demanding AI applications. New RUHMI Framework Along with the RA8P1 MCUs, Renesas has introduced RUHMI (Renesas Unified Heterogenous Model Integration), a comprehensive framework for MCUs and MPUs. RUHMI offers efficient AI deployment of the latest neural network models in a framework agnostic manner. It enables model optimization, quantization, graph compilation and conversion, and generates efficient source code. RUHMI provides native support for machine-learning AI frameworks such as TensorFlow Lite, Pytorch & ONNX. It also provides the necessary tools, APIs, code-generator, and runtime needed to deploy a pre-trained neural network, including ready-to-use application examples and models optimized for RA8P1. RUHMI is integrated with Renesas's own e2 Studio IDE to allow seamless AI development. This integration will facilitate a common development platform for MCUs and MPUs. Advanced Security Features The RA8P1 MCUs provide leading-edge security for critical applications. The new Renesas Security IP (RSIP-E50D) includes numerous cryptographic accelerators, including CHACHA20, Ed25519, NIST ECC curves up to 521 bits, enhanced RSA up to 4K, SHA2 and SHA3. In concert with Arm TrustZone®, this provides a comprehensive and fully integrated secure element-like functionality. The new MCUs also provides strong hardware Root-of-Trust and Secure Boot with First Stage Bootloader (FSBL) in immutable storage. XSPI interfaces with decryption-on-the-fly (DOTF) allow encrypted code images to be stored in external flash and decrypted on the fly as it is securely transferred to the MCU for execution. Ready to Use Solutions Renesas provides a wide range of easy-to-use tools and solutions for the RA8P1 MCUs, including the Flexible Software Package (FSP), evaluation kits and development tools. FreeRTOS and Azure RTOS are supported, as is Zephyr. Several Renesas software example projects and application notes are available to enable faster time to market. In addition, numerous partner solutions are available to support development with the RA8P1 MCUs, including a driver monitoring solution from and a traffic/pedestrian monitoring solution from Irida Labs. Other solutions can be found at the Renesas RA Partner Ecosystem Solutions Page. Key Features of the RA8P1 MCUs Processors: 1GHz Arm Cortex-M85, 500MHz Ethos-U55, 250 MHz Arm Cortex-M33 (Optional) Memory: 1MB/512KB On-chip MRAM, 4MB/8MB External Flash SIP Options, 2MB SRAM fully ECC protected, 32KB I/D caches per core Graphics Peripherals: Graphics LCD controller supporting resolutions up to WXGA (1280x800), parallel RGB and MIPI-DSI display interfaces, powerful 2D Drawing engine, parallel 16bit CEU and MIPI CSI-2 camera interfaces, 32bit external memory bus (SDRAM and CSC) interface Other Peripherals: Gigabit Ethernet and TSN Switch, XSPI (Octal SPI) with XIP and DOTF, SPI, I2C/I3C, SDHI, USBFS/HS, CAN-FD, PDM and SSI audio interfaces, 16bit ADC with S/H circuits, DAC, comparators, temperature sensor, timers Security: Advanced RSIP-E50D cryptographic engine, TrustZone, Immutable storage, secure boot, tamper resistance, DPA/SPA attack protection, secure debug, secure factory programming, Device Lifecycle management Packages: 224BGA, 289BGA Winning Combinations Renesas has combined the new RA8P1 MCUs with numerous compatible devices from its portfolio to offer a wide array of Winning Combinations, including Video Conferencing Camera with AI Capabilities, AI Drawing Robot Arm and AI-Enabled Surveillance Camera. These designs are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at Availability The RA8P1 MCUs are available now. Renesas is also shipping an RA8P1 Evaluation Kit. More information is available at Samples and kits can be ordered either on the Renesas website or through distributors. Renesas MCU Leadership A world leader in MCUs, Renesas ships more than 3.5 billion units per year, with approximately 50% of shipments serving the automotive industry, and the remainder supporting industrial and Internet of Things applications as well as data center and communications infrastructure. Renesas has the broadest portfolio of 8-, 16- and 32-bit devices, delivering unmatched quality and efficiency with exceptional performance. As a trusted supplier, Renesas has decades of experience designing smart, secure MCUs, backed by a dual-source production model, the industry's most advanced MCU process technology and a vast network of more than 250 ecosystem partners. For more information about Renesas MCUs, visit About Renesas Electronics Corporation Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at Follow us on LinkedIn, Facebook, X, YouTube and Instagram. (Remarks). All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners. ___________________________ 1 EEMBC's CoreMark® benchmark measures performance of MCUs and CPUs used in embedded systems. View source version on Contacts Media Contacts: Americas Don ParkmanRenesas Electronics Corporation+

Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems
Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

Yahoo

time01-07-2025

  • Business
  • Yahoo

Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

Built on Proven SuperGaN Technology, 650-V Gen IV Plus Devices Deliver Robust Performance with Superior Thermal Efficiency and Ultra-Low Power Loss TOKYO, July 01, 2025--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures. The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today's enhancement mode (e-mode) GaN devices. Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments. Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power. "The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas' acquisition of Transphorm last year," said Primit Parikh, Vice President of the GaN Business Division at Renesas. "Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost." Unique d-mode Normally-off Design for Reliability and Easy Integration Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high-voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers. GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints. Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage. Availability The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS are available today, along with the 4.2kW Totem-pole PFC GaN Evaluation Platform (RDTTP4200W066A-KIT). More information about Renesas' GaN solutions is available at: Get Powered by Renesas Driven by innovation, quality and reliability, Renesas leads the way in power electronics, shipping more than four billion parts per year from our portfolio of power management ICs, discrete and wide-bandgap GaN products, computing power devices and many more. These products span all major segments including automotive, IoT, infrastructure and industrial applications. Our power portfolio seamlessly attaches to our leading MCU, MPU, SoC and analog solutions, simplifying and accelerating the design process with hundreds of engineering-vetted Winning Combinations and innovative tools such as PowerCompass™ and PowerNavigator™ design software. Find out more at About Renesas Electronics Corporation Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at Follow us on LinkedIn, Facebook, X, YouTube, and Instagram. (Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners. View source version on Contacts Media Contacts: Americas Akiko IshiyamaRenesas Electronics Corporation+

Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems
Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

Business Wire

time01-07-2025

  • Business
  • Business Wire

Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures. These devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost. The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today's enhancement mode (e-mode) GaN devices. Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments. Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power. 'The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas' acquisition of Transphorm last year,' said Primit Parikh, Vice President of the GaN Business Division at Renesas. 'Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.' Unique d-mode Normally-off Design for Reliability and Easy Integration Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high-voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers. GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints. Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage. Availability The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS are available today, along with the 4.2kW Totem-pole PFC GaN Evaluation Platform (RDTTP4200W066A-KIT). More information about Renesas' GaN solutions is available at: Get Powered by Renesas Driven by innovation, quality and reliability, Renesas leads the way in power electronics, shipping more than four billion parts per year from our portfolio of power management ICs, discrete and wide-bandgap GaN products, computing power devices and many more. These products span all major segments including automotive, IoT, infrastructure and industrial applications. Our power portfolio seamlessly attaches to our leading MCU, MPU, SoC and analog solutions, simplifying and accelerating the design process with hundreds of engineering-vetted Winning Combinations and innovative tools such as PowerCompass ™ and PowerNavigator ™ design software. Find out more at About Renesas Electronics Corporation Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at Follow us on LinkedIn, Facebook, X, YouTube, and Instagram. (Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.

Semiconductor company Wolfspeed to file for bankruptcy
Semiconductor company Wolfspeed to file for bankruptcy

Yahoo

time23-06-2025

  • Business
  • Yahoo

Semiconductor company Wolfspeed to file for bankruptcy

Wolfspeed, a US-based semiconductor company known for its silicon carbide technology, has announced plans to file voluntary petitions for reorganisation under Chapter 11 of the US Bankruptcy Code as part of a Restructuring Support Agreement (RSA) with key lenders. The agreement, involving holders of more than 97% of its senior secured notes, Renesas Electronics Corporation's US subsidiary, and convertible debtholders representing more than 67% of outstanding convertible notes, aims to reduce the company's debt by approximately 70%, or $4.6bn, and cut annual cash interest payments by about 60%. The RSA terms include $275m in new financing via second lien convertible notes, backstopped by certain convertible debtholders, and a $250m paydown of senior secured notes at 109.875%. Additionally, $5.2bn of existing convertible notes and Renesas' loan will be exchanged for $500m in new notes and 95% of new common equity, subject to dilution. Existing equity will be cancelled, with current shareholders receiving 3% or 5% of new common equity, subject to adjustments. Unsecured creditors are expected to be paid in the ordinary course of business. Wolfspeed CEO Robert Feurle said: 'After evaluating potential options to strengthen our balance sheet and right-size our capital structure, we have decided to take this strategic step because we believe it will put Wolfspeed in the best position possible for the future. 'Wolfspeed has tremendous core strengths and great potential. We are a global leader in silicon carbide technology with an exceptional, purpose-built, fully automated 200mm manufacturing footprint, delivering cutting-edge products for our customers. A stronger financial foundation will enable us to focus acutely on innovation in rapidly scaling verticals undergoing electrification where quality, durability and efficiency matter most.' Feurle added, 'As we move forward, we are grateful for the confidence and support of key lenders, who share our vision for the future and believe in our growth prospects. I also want to thank our incredibly talented team for their resilience and hard work, and our customers and partners for their ongoing support.' Wolfspeed said it intends to solicit approval for a pre-packaged plan of reorganisation before filing for Chapter 11, expecting to complete the process by the end of the third quarter of 2025. The company added that it will continue operating and serving customers during this period, with plans to pay vendors as usual through an All-Trade Motion. Wolfspeed will also seek Bankruptcy Court approval to maintain employee compensation and benefits programmes. Wolfspeed is advised by Latham & Watkins LLP and Hunton Andrews Kurth LLP as legal counsel, Perella Weinberg Partners as financial advisor, and FTI Consulting as restructuring advisor. Paul, Weiss, Rifkind, Wharton & Garrison LLP and Moelis & Company represent the senior secured noteholders. Kirkland & Ellis LLP, PJT Partners, and BofA Securities advise Renesas Electronics Corporation, while Ropes & Gray LLP and Ducera Partners represent the convertible debtholders. "Semiconductor company Wolfspeed to file for bankruptcy" was originally created and published by Verdict, a GlobalData owned brand. The information on this site has been included in good faith for general informational purposes only. It is not intended to amount to advice on which you should rely, and we give no representation, warranty or guarantee, whether express or implied as to its accuracy or completeness. You must obtain professional or specialist advice before taking, or refraining from, any action on the basis of the content on our site.

Renesas Announces Executive Leadership Team Appointment
Renesas Announces Executive Leadership Team Appointment

Business Wire

time10-06-2025

  • Business
  • Business Wire

Renesas Announces Executive Leadership Team Appointment

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the appointment of Zaher Baidas as Senior Vice President and General Manager of Power, effective July 1, 2025. Zaher will be responsible for overseeing the company's power management and discrete product portfolios and for driving the execution of Renesas' global power strategy. Zaher, currently Vice President of the Timing Division within the Analog & Connectivity product group, joined Renesas in 2019 through the acquisition of Integrated Device Technology, Inc. He brings a strong engineering background and a proven track record of driving innovative solutions. His global mindset and business acumen will be instrumental in accelerating transformation and enhancing Renesas' power business performance on a global scale. Zaher will join Renesas' leadership team and will report directly to CEO Hidetoshi Shibata. Zaher succeeds Chris Allexandre, who will leave Renesas on June 30, 2025. Chris had led and transformed the Power business since assuming the role, aligning it closely with the company's strategic priorities and significantly improving operational performance. Prior to this role, he served as Chief Sales & Marketing Officer, where his leadership accelerated the company's shift toward high-growth segments, restructured the go-to-market strategy, and strengthened the foundation for solutions-led growth. Renesas extends its sincere appreciation to Chris for more than six years of outstanding and dedicated service during a period of transformation, helping position the company for long-term success. About Renesas Electronics Corporation Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at Follow us on LinkedIn, Facebook, X, YouTube and Instagram.

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