Latest news with #SKhynixInc
Korea Herald
2 hours ago
- Business
- Korea Herald
SK hynix Q2 operating profit tops W9tr for 1st time on AI chip boom
South Korean chipmaking giant SK hynix Inc. said Thursday its second-quarter operating profit surpassed 9 trillion won ($6.53 billion) for the first time, driven by booming demand for artificial intelligence chips, including high bandwidth memory. In a regulatory filing, the company reported an operating profit of a record 9.21 trillion won for the April-June period, up 68.5 percent from a year ago, setting a new quarterly record. Revenue jumped 35.4 percent on-year to 22.23 trillion won, while net income soared 69.8 percent to 6.99 trillion won. Both operating profit and sales exceeded the previous all-time highs set in the fourth quarter of last year. SK hynix attributed the record-breaking performance to robust AI-related demand, solidifying its status as a world leader in HBM technology. "Aggressive investments by global big tech companies in AI led to a steady increase in demand for AI memory," the company said in a statement. "Shipments of both DRAM and NAND flash were higher than expected, helping the company log the best quarterly results in its history." It said sales of its 12-layer HBM3E products and NAND flash memory expanded in the second quarter, contributing to a positive earnings trend, led by its "industry-leading competitiveness in AI memory and profitability-first management discipline." SK hynix noted that the inventory level remained stable in the three-month period ending in June on increased memory orders and shipments of finished products. In the second half, demand for memory is expected to continue growing as major customers have plans to launch new products. The company also forecast stronger demand for high-performance and high-capacity memory chips amid intensifying global competition to enhance AI model inference capabilities. Ongoing investments by nations to build sovereign AI infrastructure are also expected to generate long-term memory demand, it added. To meet the growing need, SK hynix said it plans to double its HBM output this year, leveraging its production capabilities and outstanding performance of its products. It also said it will be ready to provide HBM4, the sixth-generation HBM, based on customer timelines to stay competitive in the AI memory race. In addition, SK hynix said some of this year's planned investments will be frontloaded to facilitate a smoother supply of key products, including HBM, in 2026. "We are on track to meet our goal as a 'full stack AI memory provider,' satisfying customers and leading the market expansion through the timely launch of products with best-in-class quality and performance required by the AI ecosystem," said Song Hyun-jong, president and head of the Corporate Center at SK hynix. (Yonhap)
Korea Herald
3 hours ago
- Business
- Korea Herald
SK hynix Announces 2Q25 Financial Results
SEOUL, South Korea, July 24, 2025 /PRNewswire/ -- SK hynix Inc. (or "the company", announced today that it has recorded 22.232 trillion won in revenues, 9.2129 trillion won in operating profit(with an operating margin of 41%), and 6.9962 trillion won in net profit(with a net margin of 31%) in the second quarter. Both revenues and operating profits stood at all-time highs, beating the previous best results in the fourth quarter of last year. The company said that an aggressive investment by global big tech companies into AI led to a steady increase in demand for AI memory. Shipments of both DRAM and NAND flash were higher than expected, helping the company log the best quarterly results. SK hynix expanded sales of 12-high HBM3E in the DRAM space, while registering a growth in sales of NAND for all applications. With the industry-leading competitiveness in AI memory and profitability-first management discipline, the company has maintained a positive earnings trend. With the latest financial results, the company's cash and cash equivalents increased to 17 trillion won at the end of June, up by 2.7 trillion won a quarter earlier. Its debt ratio and net debt ratio stood at 25% and 6%, respectively, as net debt fell by 4.1 trillion won, compared with the previous quarter. In the second quarter, the inventory level was kept steady as customers increased both memory orders and production of their finished products. Demand for memory is expected to continue to grow as customers plan to launch new products in the second half. Particularly, SK hynix foresees that increasing competition among big tech companies to enhance inference of AI models would lead to higher demand for high-performance and high-capacity memory products. Ongoing investments by nations to build sovereign AI* would also help generate long-term demand for memory, it said. The company expects the solid performance of its products and mass-production capabilities to help double HBM, compared with a year earlier, to generate stable earnings. It will also ensure timely provision of HBM4 in accordance with customers' requests to remain competitive. SK hynix will start provision of an LPDDR-based module for servers within this year, and prepare for GDDR7 products for AI GPUs with an expanded capacity of 24Gb from 16Gb in a bid to enhance its leadership in the AI memory market with product diversification. For the NAND business, the company will maintain a prudent stance for investments considering demand conditions and profitability-first discipline, while continuing with product developments in preparation for improvements in market conditions. Particularly, it will expand sales of QLC-based high-capacity eSSD and build 321-high NAND-based product portfolio to enhance its market leadership. Song Hyun Jong, President and Head of Corporate Center, said that SK hynix will carry out part of the planned investments preemptively this year for smooth provision of major products with visible demand for next year including HBM. "We are on track to meet our goal as a Full Stack AI Memory Provider satisfying customers and leading market expansion through timely launch of products with best-in-class quality and performance required by the AI ecosystem." About SK hynix Inc. SK hynix Inc., headquartered in Korea, is the world's top tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM") and flash memory chips ("NAND flash") for a wide range of distinguished customers globally. The Company's shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at
Yahoo
10-06-2025
- Business
- Yahoo
SK hynix Presents Future DRAM Technology Roadmap at IEEE VLSI 2025
- SK hynix participates in IEEE VLSI symposium 2025 in Kyoto, Japan June 8-12 - Considering switching to 4F² VG platform from 10-nm level technology due to scaling limitation with current DRAM technology - Company to present long-term technological vision and work with industry to bring future of DRAM into reality SEOUL, South Korea, June 9, 2025 /PRNewswire/ -- SK hynix Inc. (or "the company", announced today that it presented a new DRAM technology roadmap for the next 30 years and the direction for a sustainable innovation at the IEEE VLSI symposium 2025* held in Kyoto, Japan. * IEEE VLSI (Institute of Electrical and Electronics Engineers Very Large Scale Integration) symposium: One of the most prestigious academic events in the field of semiconductor circuit and process technology, presenting academic achievement in next-generation semiconductor, AI, memory chip and packaging. The symposium is held in turn in United States and Japan annually. Cha Seon Yong, Chief Technology Officer (CTO) of SK hynix, delivered on June 10th a plenary session on "Driving Innovation in DRAM Technology: Towards a Sustainable Future". In his speech, CTO Cha explained that it is increasingly difficult to improve performance and capacity with scaling through current technology platform*. "In order to overcome such limitations, SK hynix will apply the 4F² VG (Vertical Gate) platform and 3D DRAM technology to technologies of 10-nanometer level or below with innovation in structure, material and components," he said. * Tech Platform: A technological framework that can be applied to various generations of products The 4F²* VG** platform is a next-generation memory technology that minimizes the cell area of DRAM and enables high-integration, high-speed and low-power through a vertical gate structure. * 4F²: The area occupied by one cell, a unit to store data, is indicated as F2. F indicates the minimum feature size of a semiconductor. Therefore, 4F2 is an integration technology to put more cells in a chip which one cell occupies an area of 2F by 2F. ** VG (Vertical Gate): A structure that a gate, which acts as a switch of a transistor, is vertically placed and surrounded by channels. Currently, it is a flat structure where a gate is laid horizontally on top of channels. Currently, 6F2 cells are common, but by applying 4F2 cell and wafer bonding technology that puts the circuit part below the cell area, cell efficiency and electrical characteristics can be improved. CTO Cha also introduced 3D DRAM as the main pillar for the future DRAM along with VG. CTO Cha said that although some in the industry warn of cost increase according to the number of layers stacked, it can be solved by constant technological innovation. Along with structural breakthrough, the company will also strive to find a new growth engine by sophisticating technologies of critical materials and components of DRAM to lay foundation for the next 30 years. "Until around 2010, DRAM technology was expected to face limitations at 20 nanometers, but with constant innovation, we have made it this far," said CTO Cha. "SK hynix will continue to guide the future of long-term technological innovation to be a milestone for young engineers in the field of DRAM and maintain cooperation within the industry to bring future of DRAM into reality." On the last day of the event, Joodong Park, vice president who leads the Next Gen DRAM TF, will present his findings from a recent research on how VG and wafer bonding technology affect the electrical characteristics of DRAM. About SK hynix Inc. SK hynix Inc., headquartered in Korea, is the world's top tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM") and flash memory chips ("NAND flash") for a wide range of distinguished customers globally. The Company's shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at View original content: SOURCE SK hynix Inc.
Yahoo
09-06-2025
- Business
- Yahoo
SK hynix Presents Future DRAM Technology Roadmap at IEEE VLSI 2025
- SK hynix participates in IEEE VLSI symposium 2025 in Kyoto, Japan June 8-12 - Considering switching to 4F² VG platform from 10-nm level technology due to scaling limitation with current DRAM technology - Company to present long-term technological vision and work with industry to bring future of DRAM into reality SEOUL, South Korea, June 9, 2025 /PRNewswire/ -- SK hynix Inc. (or "the company", announced today that it presented a new DRAM technology roadmap for the next 30 years and the direction for a sustainable innovation at the IEEE VLSI symposium 2025* held in Kyoto, Japan. * IEEE VLSI (Institute of Electrical and Electronics Engineers Very Large Scale Integration) symposium: One of the most prestigious academic events in the field of semiconductor circuit and process technology, presenting academic achievement in next-generation semiconductor, AI, memory chip and packaging. The symposium is held in turn in United States and Japan annually. Cha Seon Yong, Chief Technology Officer (CTO) of SK hynix, delivered on June 10th a plenary session on "Driving Innovation in DRAM Technology: Towards a Sustainable Future". In his speech, CTO Cha explained that it is increasingly difficult to improve performance and capacity with scaling through current technology platform*. "In order to overcome such limitations, SK hynix will apply the 4F² VG (Vertical Gate) platform and 3D DRAM technology to technologies of 10-nanometer level or below with innovation in structure, material and components," he said. * Tech Platform: A technological framework that can be applied to various generations of products The 4F²* VG** platform is a next-generation memory technology that minimizes the cell area of DRAM and enables high-integration, high-speed and low-power through a vertical gate structure. * 4F²: The area occupied by one cell, a unit to store data, is indicated as F2. F indicates the minimum feature size of a semiconductor. Therefore, 4F2 is an integration technology to put more cells in a chip which one cell occupies an area of 2F by 2F. ** VG (Vertical Gate): A structure that a gate, which acts as a switch of a transistor, is vertically placed and surrounded by channels. Currently, it is a flat structure where a gate is laid horizontally on top of channels. Currently, 6F2 cells are common, but by applying 4F2 cell and wafer bonding technology that puts the circuit part below the cell area, cell efficiency and electrical characteristics can be improved. CTO Cha also introduced 3D DRAM as the main pillar for the future DRAM along with VG. CTO Cha said that although some in the industry warn of cost increase according to the number of layers stacked, it can be solved by constant technological innovation. Along with structural breakthrough, the company will also strive to find a new growth engine by sophisticating technologies of critical materials and components of DRAM to lay foundation for the next 30 years. "Until around 2010, DRAM technology was expected to face limitations at 20 nanometers, but with constant innovation, we have made it this far," said CTO Cha. "SK hynix will continue to guide the future of long-term technological innovation to be a milestone for young engineers in the field of DRAM and maintain cooperation within the industry to bring future of DRAM into reality." On the last day of the event, Joodong Park, vice president who leads the Next Gen DRAM TF, will present his findings from a recent research on how VG and wafer bonding technology affect the electrical characteristics of DRAM. About SK hynix Inc. SK hynix Inc., headquartered in Korea, is the world's top tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM") and flash memory chips ("NAND flash") for a wide range of distinguished customers globally. The Company's shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at View original content: SOURCE SK hynix Inc.
Korea Herald
22-05-2025
- Business
- Korea Herald
SK hynix Develops UFS 4.1 Solution Based on 321-High NAND
SEOUL, South Korea, May 22, 2025 /PRNewswire/ -- SK hynix Inc. (or "the company", announced today that it has developed UFS 4.1 solution product adopting the world's highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications. The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the flagship smartphone markets. With an increase in demand for on-device AI leading to greater importance of the balance between computation capabilities and battery efficiency of a device, the mobile market is now requiring thinness and low power from a mobile device. The latest product comes with a 7% improvement in power efficiency, compared with the previous generation based on 238-high NAND and a slimmer 0.85mm thickness, down from 1mm before, to fit into a ultra-slim smartphone. The product also supports data transfer speed of 4300MB/s, the fastest sequential read* for a fourth-generation of UFS, while providing the best-in-class performance by also improving random read and write speed**, critical for multitasking, by 15% and 40%, respectively. Immediate provision of the required data for on-device AI and faster running speed and the responsivity of an application are expected to enhance user experience. SK hynix plans to win customer qualification within the year and ship in volume from the first quarter of next year. The product will be provided in two capacity types – 512GB and 1TB. Ahn Hyun, President and Chief Development Officer, said that SK hynix plans to complete development of the 321-high 4D NAND-based SSD for both consumers and data centers within the year. "We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with AI technological edge." About SK hynix Inc. SK hynix Inc., headquartered in Korea, is the world's top tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM") and flash memory chips ("NAND flash") for a wide range of distinguished customers globally. The Company's shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at
