Latest news with #SiC
Forbes
2 days ago
- Automotive
- Forbes
What Next For Navitas Stock After 2x Rise This Year?
Photo illustration byNavitas Semiconductor (NASDAQ:NVTS) is a firm that designs and produces next-generation power semiconductors utilized in consumer electronics, solar energy systems, and electric vehicles. It experienced a nearly 8% increase in stock price during Friday's trading session. The stock has effectively doubled year-to-date. This rise has been fueled by increasing investor confidence regarding Navitas' collaboration with Nvidia. In May, both companies declared their partnership aimed at Nvidia's state-of-the-art 800V high-voltage direct current (HVDC) architecture, which seeks to improve the energy efficiency and scalability of data centers. This agreement could establish Navitas as a provider of advanced silicon carbide (SiC) and gallium nitride (GaN) power chips for the new HVDC architecture, which Nvidia claims will reduce copper usage, minimize rack dimensions, and enhance reliability and efficiency. Although the collaboration with the AI processor giant is perceived as a vote of confidence in Navitas' capabilities, Navitas is only one of multiple suppliers involved in Nvidia's project. The proportion of Navitas content within each server system and the potential for revenue generation remain uncertain. Nvidia's press release mentioned other companies such as Infineon, MPS, ROHM, STMicroelectronics, and Texas Instruments, along with Navitas, as semiconductor suppliers for the initiative. (Related: RGTI Stock: Path To 10x Growth) Navitas Stock Appears Risky In general, Navitas Semiconductor (NVTS) stock does not seem appealing at its current valuation, primarily due to its high valuation and weak fundamentals. Our evaluation of Growth, Profitability, Financial Stability, and Downturn Resilience suggests that the company's operational performance and financial status are concerning. Nevertheless, if you are looking for upside potential with lower volatility compared to individual stocks, the Trefis High Quality portfolio offers an alternative, having outperformed the S&P 500 and yielded returns exceeding 91% since its launch. NVTS is trading at a premium, with a price-to-sales ratio surpassing 17x, compared to only 3.1 for the S&P 500. While the firm reported an impressive average revenue growth of 53.5% over the last three years, this growth has been inconsistent, with revenues decreasing by 16.9% in the past 12 months and plummeting by 39.5% year-over-year in the most recent quarter. Profitability also poses a challenge. Navitas recorded an operating loss of $122 million over the past year, resulting in an exceptionally weak operating margin of -164.2%, which is significantly worse than that of most of its competitors. On a brighter note, the balance sheet is relatively stable. Navitas holds just $6.9 million in debt, resulting in a low debt-to-equity ratio of 0.5% (in contrast to 19.4% for the S&P 500), as well as a strong cash-to-assets ratio of 20.3%. However, downturn resilience remains low. NVTS stock has performed significantly worse than the benchmark S&P 500 index during many recent downturns. While investors hope for a soft landing for the U.S. economy, what could happen if another recession occurs? Our dashboard How Low Can Stocks Go During A Market Crash illustrates how key stocks performed during and following the last six market crashes. While it may be wise to steer clear of NVTS stock for the time being, you might want to consider the Trefis Reinforced Value (RV) Portfolio, which has outperformed its all-cap stocks benchmark (a combination of the S&P 500, S&P mid-cap, and Russell 2000 benchmark indices) to deliver robust returns for investors. What makes this possible? The quarterly rebalanced mix of large-, mid-, and small-cap RV Portfolio stocks has offered an effective strategy to capitalize on positive market conditions while mitigating losses during market downturns, as detailed in the RV Portfolio performance metrics. Invest with Trefis Market-Beating Portfolios See all Trefis Price Estimates
Time of India
16-07-2025
- Automotive
- Time of India
Why Silicon Carbide (SiC) is transforming future of electric vehicles
The global shift towards electric vehicles (EVs) is not just a matter of replacing petrol with batteries. At the core of this transformation lies a revolution in power electronics with SiC emerging as the enabler. SiC is fast replacing traditional silicon in key EV components, which otherwise suffer sharper drawbacks when it comes to efficiency, performance, and reliability. Silicon carbide is a compound semiconductor material with a very wide bandgap, high thermal conductivity, and able to operate at higher voltages and temperatures than conventional silicon. Special, intrinsic properties of SiC find critical suitability in the harsh environment of EVs, where efficiency, weight reduction, and reliability constitute the high priorities. Today, SiC enters major EV areas, such as: Inverters: Conversion of DC from the battery to AC for the motor (propulsion).DC-DC Converters: Step-down high-voltage battery power for auxiliary Chargers: Controlling the charging process from external Charging System (MCS): Connecting to high-power lines for faster charging. Key Benefits Operating with Higher Efficiency: Reduced switching and conduction losses in SiC devices mean less energy wasted as heat. This also means a greater driving range and better energy utilisation. Compact and Lightweight: The enhanced qualities of SiC allow for smaller, lightweight components, freeing space and adding to the reduction in vehicle Performance: Being good in heat dissipation, SiC requires less bulky cooling systems and can pave the way for reliable operation at elevated Charging: Since SiC-based chargers can be run more efficiently at high voltages, they can support faster charging of EV Cost Charging Stations: Integrated solid-state transformers utilizing high-voltage SiC devices (≥ 3.3 kV) reduce MCS cost, weight, and size. SiC's Impact on EV Performance MetricSiC vs Silicon PerformanceInverter EfficiencySiC: up to 99.1% vs Silicon: 97.1%Range Increase5% to 10% more range with SiCPower Loss ReductionUp to 70% lower switching lossesWeight and SizeInverters up to 40% lighter, 30% smallerCharging TimeSiC enables 800V (and higher) systems, halving charge timeBattery Cost SavingsSiC inverter can reduce battery size for same range, saving up to 5 per vehicle Major car makers are making use of SiC in their newest EVs. In the case of Audi, the use of SiC inverters has enhanced efficiency by nearly 60per cent under certain operating conditions. The 800V battery probably would not have come onstage if SiC had not been there, and it is now gaining traction in high-performance models from Kia, Hyundai, and Lucid, offering really fast charging and extended range. Additionally, the electrification of heavy-duty vehicles, such as buses, construction equipment and tractors, is also a significant and growing trend. These heavy-duty EVs are bigger and heavier than passenger EVs and require higher-power levels for propulsion and charging. To address these higher-power requirements, the adoption of higher battery voltages, particularly around 1500V, combined with higher-voltage SiC technology, plays a crucial role in enabling the electrification of heavy-duty vehicles. The increased efficiency of SiC-based systems results in less energy elimination and extends the range of EVs; and, therefore, reduces its overall impact on the environment. Small batteries equate to lighter vehicles that will consume fewer resources and emit fewer emissions during its lifespan. The other side of the coin is better reliability and durability that ultimately result in reduced maintenance and lower cost of ownership. Silicon carbide is no ordinary material technology; rather, it is becoming a truly defining factor for the new generation of EVs, fast charging infrastructure, and electrified transportation overall, such as eVTOL (Electric Vertical Take-Off and Landing) aircraft. By giving rise to greater efficiencies, longer ranges, shorter charge times, and smaller sizes, SiC directly addresses some of the greatest impediments to mass EV acceptance. With ongoing R&D, the role of SiC in shaping and enabling the future of sustainable mobility will get stronger; empower energy to do more.
Yahoo
04-07-2025
- Automotive
- Yahoo
Here's Why Aehr Test Systems Surged in June (Hint: It's AI related)
Aehr Test Systems is not a one-trick pony, and the company is impressively diversifying its revenue streams. The market is speculating that its new customers could prove lucrative and lasting. 10 stocks we like better than Aehr Test Systems › Aehr Test Systems (NASDAQ: AEHR) stock rose by 35.5% in June, according to data provided by S&P Global Market Intelligence. The move comes as positive developments in the end markets that Aehr is targeting helped support the idea that the company can diversify its revenue streams and improve its growth in the process. The company is best known for its test and burn-in equipment for the silicon carbide (SiC) wafer-level burn-in (WLBI) market. As management notes, this end market contributed 90% of Aehr's revenue in 2024. Unfortunately, at least from a near-term perspective, the key driver for Aehr's SiC WLBI solutions is the electric vehicle (EV) market and its associated charging infrastructure. Aehr's key customers in this market, which include ON Semiconductor, have come under pressure due to the ongoing relatively high interest rate negatively impacting EV sales. For reference, and by way of example, Wall Street analysts expect ON Semiconductor's sales to decline by 16.5% in 2025. Consequently, Aehr needs to develop other markets to help offset weakness in its core SiC WLBI market. And the good news is it's not only doing that, but those markets are also in growth mode. The progress was noted in the third-quarter earnings presentation in April with CEO Gayn Erickson outlining that SiC WLBI revenue is now tracking to "less than 40%, with artificial intelligence (AI) processors burn-in representing over 35% of our business in just the first year." Furthermore, in the third quarter, Aehr had four customers accounting for 10% of its revenue, with three of them coming from new markets for Aehr: WLBI for AI processors Packaged part burn-in (PPBI) "for qualification and ongoing process monitoring of AI processors" "WLBI of gallium nitride (GaN) semiconductors" Fast forward to June, and the positive momentum in AI and GaN WLBI spending has continued with Nvidia's well-received earnings report coming at the end of May. Moreover, Nvidia is working on developing a data center architecture for the next generation of data centers, starting in 2027, and has named GaN semiconductor company Navitas Semiconductor as a partner. As such, the market is speculating that Navitas could be a potential customer of Aehr Test Systems. The growth of alternative revenue streams is a significant plus for Aehr's investment case, and demand for SiC WLBI is likely to improve over time as EV investment is expected to increase. All told, the company's revenue and earnings remain highly cyclical, but its new end markets are helping to reduce its heavy reliance on EV spending, which has benefited the stock in June. Before you buy stock in Aehr Test Systems, consider this: The Motley Fool Stock Advisor analyst team just identified what they believe are the for investors to buy now… and Aehr Test Systems wasn't one of them. The 10 stocks that made the cut could produce monster returns in the coming years. Consider when Netflix made this list on December 17, 2004... if you invested $1,000 at the time of our recommendation, you'd have $699,558!* Or when Nvidia made this list on April 15, 2005... if you invested $1,000 at the time of our recommendation, you'd have $976,677!* Now, it's worth noting Stock Advisor's total average return is 1,060% — a market-crushing outperformance compared to 180% for the S&P 500. Don't miss out on the latest top 10 list, available when you join . See the 10 stocks » *Stock Advisor returns as of June 30, 2025 Lee Samaha has no position in any of the stocks mentioned. The Motley Fool has positions in and recommends Nvidia. The Motley Fool has a disclosure policy. Here's Why Aehr Test Systems Surged in June (Hint: It's AI related) was originally published by The Motley Fool
Business Upturn
01-07-2025
- Automotive
- Business Upturn
Navitas Announces Plans for 200mm GaN Production with PSMC
Next-phase strategy expected to strengthen supply chain, drive innovation, and improve cost efficiency—supporting GaN's ramp into AI data centers, EVs, solar, and home appliances. TORRANCE, Calif., July 01, 2025 (GLOBE NEWSWIRE) — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC or Powerchip), to start production and continue development of best-in-class 200mm GaN-on-silicon technology. Navitas' GaN IC portfolio is expected to use Powerchip's 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has been operational since 2019 and supports various high-volume manufacturing processes for GaN, ranging from micro-LEDs to RF GaN devices. Powerchip's capabilities include an improved 180nm CMOS process, offering smaller and more advanced geometries, which bring improvements in performance, power efficiency, integration, and cost. '200mm GaN-on-silicon production on a 180nm process node enables us to continue innovating higher power density, faster, and more efficient devices while simultaneously improving cost, scale, and manufacturing yields', said Dr. Sid Sundaresan, SVP of WBG Technology Platforms at Navitas. Powerchip is expected to manufacture Navitas' GaN portfolio with voltage ratings from 100V to 650V, supporting the growing demand for GaN for 48V infrastructure, including hyper-scale AI data centers and EVs. Qualification of initial devices is expected in Q4 2025. The 100V family is expected to start production first at Powerchip in 1H26, while the company expects 650V devices will transition from Navitas' existing supplier, TSMC, to Powerchip over the next 12-24 months. Navitas recently made several announcements in the AI data center, EV, and solar markets, including its collaboration with NVIDIA to support GaN and SiC technologies for 800V HVDC architectures for 1 MW IT racks and beyond. Enphase announced that its next-generation IQ9 would include Navitas' 650 V bi-directional GaNFast ICs, and Changan Automobile announced its first commercial GaN-based OBC (on-board charger) using Navitas' GaNSafe technology. 'We are proud to partner with Powerchip to advance high-volume 200 mm GaN-on-silicon production and look forward to driving continued innovation together in the years ahead', said Gene Sheridan, CEO and co-founder of Navitas. 'Through our partnership with Powerchip, we are well-positioned to drive sustained progress in product performance, technological evolution, and cost efficiency.' 'Powerchip has collaborated with Navitas on GaN-on-Si technology for years, and we're thrilled to announce that product qualification is nearly complete – bringing us to the verge of mass production', said Martin Chu, President at Powerchip. 'Building on this strong partnership, Powerchip is committed to expanding our cooperation and continuously supporting Navitas in exploring and growing the GaN market.' About Powerchip Semiconductor Manufacturing Corporation Powerchip Semiconductor Manufacturing Corporation (PSMC) is a Taiwanese semiconductor foundry that develops, manufactures, and distributes advanced memory components and other integrated circuits. Founded in 1994, PSMC operates multiple 12-inch and 8-inch wafer fabs, offering foundry services, design, manufacturing, and testing services. They are recognized for their expertise in developing and manufacturing a range of semiconductor products, including power integrated circuits, discrete components, and image sensors. About Navitas Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation, founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry's first and only 20-year GaNFast warranty. Navitas was the world's first semiconductor company to be CarbonNeutral®-certified. Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners. Forward-Looking Statements Statements and information in this press release that are not historical are forward-looking statements within the meaning of the Private Securities Litigation Reform Act of 1995 and are made pursuant to the 'safe harbor' provisions of such Act. Forward-looking statements may be identified by the use of words such as 'we expect' or 'are expected to be,' 'estimate,' 'plan,' 'project,' 'forecast,' 'intend,' 'anticipate,' 'believe,' 'seek,' or other similar expressions that predict or indicate future events or trends or that are not statements of historical matters. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. The risks, uncertainties, assumptions and other factors that could cause actual events or results to differ from the events or results predicted or implied by our forward-looking statement include those risk factors discussed in our filings with the SEC, including those disclosed under the caption 'Risk Factors' in our annual report on Form 10-K for the year ended December 31, 2024, our quarterly report on Form 10-Q for the quarter ended March 31, 2025 and subsequent quarterly reports. Navitas may elect to update these forward-looking statements at some point in the future, but specifically disclaims any obligation to do so. Contact InformationLlew Vaughan-Edmunds, Sr Director, Product Management & Marketing [email protected]
Yahoo
25-06-2025
- Automotive
- Yahoo
ROHM Launches an Isolated Gate Driver IC Optimized for High-Voltage GaN Devices
Isolated Gate Driver IC Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-class high-voltage GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. As global energy consumption continues to grow, energy-saving initiatives have become a shared global priority. Motors and power supplies alone are estimated to account for approx. 97% of the world's total electricity consumption. Achieving higher efficiency in these systems is increasingly dependent on utilizing wide bandgap devices such as SiC and GaN to control and convert electricity more efficiently. Leveraging expertise in developing isolated gate driver ICs for silicon semiconductors and SiC devices, ROHM has introduced this new IC as the first in a series of isolated gate driver solutions optimized for GaN devices. Safe signal transmission is achieved by isolating the device from the control circuitry during switching operations that involve rapid voltage rise and fall cycles. The BM6GD11BFJ-LB utilizes proprietary on-chip isolation technology to reduce parasitic capacitance, enabling high-frequency operation up to 2MHz. This maximizes the high-frequency switching capabilities of GaN devices. This contributes not only to greater energy efficiency and performance in applications but also reduces mounting area by minimizing the size of peripheral components. At the same time, CMTI (Common-Mode Transient Immunity - an indicator of noise tolerance in noise isolated gate driver ICs) has been increased to 150V/ns – 1.5 times higher than conventional products – preventing malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65ns, 33% less than conventional products. These performance improvements allow for stable, reliable operation at higher frequencies while minimizing power loss through better duty cycle control. With a gate drive voltage range of 4.5V to 6.0V and an isolation voltage of 2500Vrms, the BM6GD11BFJ-LB is designed to fully support a wide range of high-voltage GaN devices, including ROHM's newly added 650V EcoGaN™ HEMT. The industry-leading low output-side current consumption of 0.5mA (Max) also reduces standby power, improving overall system efficiency. EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd Application Examples◇ Industrial Equipment: Power supplies for PV inverters, ESS (Energy Storage Systems), communication base stations, servers, and industrial motors◇ Consumer Devices: White goods, AC adapters (USB chargers), PCs, TVs, refrigerators, Air Conditioners The BM6GD11BFJ-LB is now available. It is offered through online distributors such as DigiKey™ and Mouser™. The sample price is $4.0/unit (excluding tax). DigiKey™ and Mouser™ are trademarks or registered trademarks of their respective companies. Going forward, ROHM plans to offer gate driver ICs for GaN device control together with GaN device products, supporting simpler application design. TerminologyCommon-Mode Transient Immunity (CMTI)A key parameter of isolated gate drivers, CMTI refers to the driver's ability to withstand rapid voltage changes that occur over very short durations. This is especially important when driving high slew rate devices such as GaN HEMTs, where rapid voltage transitions are common. A gate driver with high CMTI can prevent device damage while reducing the risk of circuit shorts. Attachment Isolated Gate Driver IC CONTACT: Heike Mueller ROHM Semiconductor +1-408-720-1900 hmueller@
